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TC74AC02F

Toshiba Semiconductor
Part Number TC74AC02F
Manufacturer Toshiba Semiconductor
Description Quad 2-Input NOR Gate
Published Aug 25, 2006
Detailed Description TC74AC02P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC02P, TC74AC02F, TC74AC02FT Quad 2-Input ...
Datasheet PDF File TC74AC02F PDF File

TC74AC02F
TC74AC02F

Overview
TC74AC02P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC02P, TC74AC02F, TC74AC02FT Quad 2-Input NOR Gate The TC74AC02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 3.
7 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74F02 TC74AC02P TC74AC02F TC74AC02FT Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A TSSOP14-P-0044-0.
65A : 0.
96 g (typ.
) : 0.
18 g (typ.
) : 0.
06 g (typ.
) Start of commercial production 1986-05 1 2014-03-01 Pin Assignment TC74AC02P/F/FT IEC Logic Symbol 1Y 1 1A 2 1B 3 2Y 4 2A 5 2B 6 GND 7 (top view) Truth Table A B Y L L H L H L H L L H H L 14 VCC 13 4Y 12 4B 11 4A 10 3Y 9 3B 8 3A 1A (2) >1 1B (3) 2A (5) 2B (6) 3A (8) 3B (9) 4A (11) 4B (12) (1) 1Y (4) 2Y (10) 3Y (13) 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Exceeding any of t...


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