DatasheetsPDF.com

TC74AC10P

Toshiba Semiconductor
Part Number TC74AC10P
Manufacturer Toshiba Semiconductor
Description Triple 3-Input NAND Gate
Published Aug 25, 2006
Detailed Description TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate Th...
Datasheet PDF File TC74AC10P PDF File

TC74AC10P
TC74AC10P


Overview
TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 5.
0 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74F10 Pin Assignment TC74AC10P TC74AC10F Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A : 0.
96 g (typ.
) : 0.
18 g (typ.
) Start of commercial production 1987-05 1 2014-03-01 IEC Logic Symbol TC74AC10P/F Truth Table A B C Y L X X H X L X H X X L H H H H L X: Don’t care Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)