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STB80NF55L-06

ST Microelectronics
Part Number STB80NF55L-06
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Oct 9, 2006
Detailed Description www.DataSheet4U.com ® STB80NF55L-06 N - CHANNEL 55V - 0.005 Ω - 80A D2PAK STripFET™ POWER MOSFET TYPE STB80NF55L-06 s...
Datasheet PDF File STB80NF55L-06 PDF File

STB80NF55L-06
STB80NF55L-06

Overview
www.
DataSheet4U.
com ® STB80NF55L-06 N - CHANNEL 55V - 0.
005 Ω - 80A D2PAK STripFET™ POWER MOSFET TYPE STB80NF55L-06 s s s s V DSS 55 V R DS( on ) < 0.
0065 Ω ID 80 A TYPICAL RDS(on) = 0.
005 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK TO-263 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DataSheet4U.
com s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DataShe e ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM ( •) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature o Value 55 55 ± 20 80 57 320 210 1.
4 1 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =40A , VDD = 30V Unit V V V A A A W W /o C J o o C C (•) Pulse width limited by safe operating area October 1999 1/8 DataSheet4U.
com www.
DataSheet4U.
com STB80NF55L-06 THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 0.
71 62.
5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min.
55 1 10 ± 100 Typ.
Max.
Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Dr...


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