DatasheetsPDF.com

STB80NF55L-08

ST Microelectronics
Part Number STB80NF55L-08
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Oct 9, 2006
Detailed Description www.DataSheet4U.com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET ...
Datasheet PDF File STB80NF55L-08 PDF File

STB80NF55L-08
STB80NF55L-08


Overview
www.
DataSheet4U.
com STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.
0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 s s s VDSS 55 V 55 V RDS(on) 0.
008Ω 0.
008Ω ID 80 A 80 A TYPICAL RDS(on) = 0.
0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 1 3 3 2 1 TO-220 D2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting tranINTERNAL SCHEMATIC DIAGRAM sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
DataSheet4U.
com APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (1) ID (1) IDM ( ) PTOT dv/dt (2) EAS(3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤ 500A/µs, VDD =40V Tj ≤ TJMAX.
(3) Starting Tj=25°C, ID=40A, VDD=40V DataShee Unit V V V A A A W W/°C V/ns mJ °C °C (q ) Pulse width limited by safe operating area April 2003 1/8 DataSheet4U.
com www.
DataSheet4U.
com STP80NF55L-08 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.
5 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-b...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)