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K3236

TOSHIBA
Part Number K3236
Manufacturer TOSHIBA
Description 2SK3236
Published Oct 11, 2006
Detailed Description www.DataSheet4U.com www.DataSheet4U.com 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2...
Datasheet PDF File K3236 PDF File

K3236
K3236

Overview
www.
DataSheet4U.
com www.
DataSheet4U.
com 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · · 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 42 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1.
3~2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 35 105 30 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA ― SC-67 2-10R1B DataSheet4U.
com 35 3.
0 150 -55~150 68 TOSHIBA DataShee ...


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