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STB200NF04T4

ST Microelectronics
Part Number STB200NF04T4
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Oct 11, 2006
Detailed Description www.DataSheet4U.com STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II ...
Datasheet PDF File STB200NF04T4 PDF File

STB200NF04T4
STB200NF04T4

Overview
www.
DataSheet4U.
com STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.
3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.
0037 Ω < 0.
0037 Ω < 0.
0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS www.
DataSheet4U.
com s HIGH CURRENT, HIGH SWITCHING SPEED s AUTOMOTIVE Table 2: Order Codes SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE & REEL TUBE TUBE Rev.
3 October 2004 1/15 www.
DataSheet4U.
com www.
DataSheet4U.
com DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
12 3 I2PAK www.
DataSheet4U.
com STP200NF04 - STB200NF04 - STB200NF04-1 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 ± 20 120 120 480 310 2.
07 1.
5 1.
3 -55 to 175 Unit V V V A A A W W/°C V/ns J °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package Table 4: Thermal Data Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance ...


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