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IXFH40N50Q2

IXYS Corporation
Part Number IXFH40N50Q2
Manufacturer IXYS Corporation
Description Power MOSFET
Published Oct 13, 2006
Detailed Description HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intri...
Datasheet PDF File IXFH40N50Q2 PDF File

IXFH40N50Q2
IXFH40N50Q2

Overview
HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr VDSS = 500V ID25 = 40A RDS(on) ≤ 160mΩ trr ≤ 250ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
063 in) from case for 10s Mounting torque Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Maximum Ratings 500 V 500 V ±30 V ±40 V 40 A 160 A 40 A 2.
5 J 20 V/ns 560 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 1.
13/10 Nm/lb.
in.
6 g Characteristic Values Min.
Typ.
Max.
500 V 3.
0 5...


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