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IXFH40N50Q

IXYS Corporation
Part Number IXFH40N50Q
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Hig...
Datasheet PDF File IXFH40N50Q PDF File

IXFH40N50Q
IXFH40N50Q

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 40N50Q IXFT 40N50Q VDSS = 500 V = 40 A ID25 RDS(on) = 0.
14 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±30 ±40 40 160 40 50 2.
5 20 500 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 300 Features z z 1.
13/10 Nm/lb.
in.
6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2.
5 4.
5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.
14 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved www.
DataSheet4U.
net DS99002(01/03) IXFH 40N50Q IXFT 40N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
22 35 3800 VGS = 0 V, VDS = 25 V, f = 1 MHz 660 180 17 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 2.
0 Ω (External), 20 56 14 130 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 26 58 0.
25 (TO-247) 0.
25 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2...


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