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IRHN7230

International Rectifier
Part Number IRHN7230
Manufacturer International Rectifier
Description N-Channel Transistor
Published Oct 15, 2006
Detailed Description www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCH...
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IRHN7230
IRHN7230

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PD-9.
822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7230 IRHN8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.
40Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si).
Under identical preand post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1.
No compensation in gate drive circuitry is required.
In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseco...


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