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IRF4000

International Rectifier
Part Number IRF4000
Manufacturer International Rectifier
Description IEEE 802.3af Compliant PoE Switch
Published Nov 6, 2006
Detailed Description www.DataSheet4U.com PD - 97056 IRF4000 HEXFET® Power MOSFET Applications l IEEE 802.3af Compliant PoE Switch in Power...
Datasheet PDF File IRF4000 PDF File

IRF4000
IRF4000

Overview
www.
DataSheet4U.
com PD - 97056 IRF4000 HEXFET® Power MOSFET Applications l IEEE 802.
3af Compliant PoE Switch in Power Sourcing Equipment VDSS 100V Features l l l l l l 270m:@VGS = 12V 2.
4A 350m:@VGS = 10V ' ' ' ' RDS(on) max ID Exceeds IEEE 802.
3af PoE requirements Rugged planar technology with large SOA Very Low Leakage at 100V (1.
5µA max) Fully characterized avalanche voltage and current Thermally enhanced Saves space: replaces 4 discrete MOSFETs * 6 * 6 * 6 * 6 5mm x 10mm Power MLP IRF4000 ISOMETRIC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
100 ± 30 2.
4 1.
9 19 3.
5 0.
028 8.
6 -55 to + 150 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range W W/°C V/ns °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ.
Max.
1.
5 36 Units °C/W f ––– ––– Notes  through … are on page 7 www.
irf.
com 1 10/07/05 www.
DataSheet4U.
com IRF4000 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 100 ––– ––– ––– 3.
5 ––– ––– ––– ––– ––– 0.
19 230 270 ––– ––– ––– ––– ––– ––– ––– 270 350 5.
7 1.
5 10 100 -100 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ V µA nA VGS = 12V, ID = 2.
4A VGS = 10V, ID = 2.
4A VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V e e e VDS = 80V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ci...


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