Part Number RD12MVS1
Manufacturer Mitsubishi Electric
Title Silicon RF Power MOS FET
Description RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High Power Gain: ...
Features High Power Gain: Pout11.5W, Gp12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot ...

File Size 428.63KB
Datasheet RD12MVS1 PDF File

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