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RD12MVP1

Mitsubishi Electric
Part Number RD12MVP1
Manufacturer Mitsubishi Electric
Description Silicon MOSFET Power Transistor
Published Feb 15, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (...
Datasheet PDF File RD12MVP1 PDF File

RD12MVP1
RD12MVP1

Overview
www.
DataSheet4U.
com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.
2+/-0.
05 0.
65+/-0.
2 (c) (b) (b) 7.
0+/-0.
2 8.
0+/-0.
2 6.
2+/-0.
2 5.
6+/-0.
2 (d) 4.
2+/-0.
2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
OUTLINE DRAWING FEATURES •High Power Gain Pout>10W, Gp>13dB@Vdd=7.
2V,f=175MHz •High Efficiency: 55%min.
(175MHz) •No gate protection diode INDEX MARK [Gate] (3.
6) (4.
5) 0.
95+/-0.
2 2.
6+/-0.
2 TOP VIEW DETAIL A SIDE VIEW 1.
8+/-0.
1 BOTTOM VIEW Terminal No.
(a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets.
SIDE VIEW Standoff = max 0.
05 APPLICATION 0.
7+/-0.
1 UNIT:mm DETAIL A NOTES: 1.
( ) Typical value RoHS COMPLIANT RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot...


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