DatasheetsPDF.com

APT40GP90B

Advanced Power Technology
Part Number APT40GP90B
Manufacturer Advanced Power Technology
Description POWER MOS-7 IGBT
Published Dec 13, 2006
Detailed Description www.DataSheet4U.com TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT ® TO-247 The POWER MOS...
Datasheet PDF File APT40GP90B PDF File

APT40GP90B
APT40GP90B

Overview
www.
DataSheet4U.
com TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT ® TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
® G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 • SSOA Rated E C G E All Ratings: TC = 25°C unless otherwise specified.
APT40GP90B UNIT 900 ±20 ±30 @ TC = 25°C Volts 100 50 160 160A @ 900V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 900 3 4.
5 3.
2 2.
7 250 µA nA 5-2004 050-7479 Rev A 6 3.
9 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Inpu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)