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AP501

WJ Communication
Part Number AP501
Manufacturer WJ Communication
Description PCS-band 4W HBT Amplifier Module
Published Dec 13, 2006
Detailed Description www.DataSheet4U.com AP501 Product Features • 1930 – 1990 MHz • 32.5 dB Gain • +36 dBm P1dB • -62 dBc ACPR @ 27 dBm IS-9...
Datasheet PDF File AP501 PDF File

AP501
AP501

Overview
www.
DataSheet4U.
com AP501 Product Features • 1930 – 1990 MHz • 32.
5 dB Gain • +36 dBm P1dB • -62 dBc ACPR @ 27 dBm IS-95A linear power The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module Product Description The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package.
The multi-stage amplifier module has 32.
5 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power.
The module has been internally optimized for driver applications provide -62 dBc ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR at 26.
5 for wCDMA applications.
The module can be biased down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components.
The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature.
It has the added feature of a +5V power down control pin.
A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes.
All devices are 100% RF and DC tested.
Functional Diagram 1 2 3 4 5 6 • -55 dBc ACLR @ 26.
5 dBm wCDMA linear power Top View Pin No.
1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg Applications • Final stage amplifiers for repeaters • Optimized for driver amplifier The AP501 is targeted for use as a driver or final stage amplifier PA mobile infrastructure in wireless infrastructure where high linearity and high power is required.
This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.
Specifications 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture Typical Performance (4) Units Min Typ Max Parameter...


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