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AP502

WJ Communication
Part Number AP502
Manufacturer WJ Communication
Description UMTS-band 4W HBT Amplifier Module
Published Dec 15, 2006
Detailed Description www.DataSheet4U.com AP502 Product Features • 2110 – 2170 MHz • 30 dB Gain • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA ...
Datasheet PDF File AP502 PDF File

AP502
AP502

Overview
www.
DataSheet4U.
com AP502 Product Features • 2110 – 2170 MHz • 30 dB Gain • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power The Communications Edge TM Product Information UMTS-band 4W HBT Amplifier Module Product Description The AP502 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package.
The multi-stage amplifier module has 30 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power.
The module has been internally optimized for driver applications provide -55 dBc ACLR at 25 for wCDMA applications.
The module can be biased down for current when higher efficiency is required.
The AP502 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components.
The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature.
It has the added feature of a +5V power down control pin.
A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes.
All devices are 100% RF and DC tested.
The AP502 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required.
This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.
Functional Diagram 1 2 3 4 5 6 • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg Top View Pin No.
1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground Applications • Final stage amplifiers for repeaters • Optimized for driver amplifier PA mobile infrastructure Specifications 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture Typical Performance (4) Units Min MHz MHz dB dBc dB dB dBm dBm mA mA V V VSWR Parameter Operational Bandwidth Test Frequency Power Gain wCDMA ACLR1 @ 25d...


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