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APT50GP60B2DF2

Advanced Power Technology
Part Number APT50GP60B2DF2
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published Dec 19, 2006
Detailed Description www.DataSheet4U.com TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT ® T-MaxTM The ...
Datasheet PDF File APT50GP60B2DF2 PDF File

APT50GP60B2DF2
APT50GP60B2DF2

Overview
www.
DataSheet4U.
com TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 28A • 100 kHz operation @ 400V, 44A • SSOA rated C E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B2DF2 UNIT 600 ±20 ±30 @ TC = 25°C Volts 100 72 190 190A@600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.
5 2.
2 2.
1 750 2 6 2.
7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2 Volts I CES I GES µA nA 4-2004 050-7436 Rev C 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon...


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