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NTJS3151P

ON Semiconductor
Part Number NTJS3151P
Manufacturer ON Semiconductor
Description Trench Power MOSFET
Published Jan 14, 2007
Detailed Description NTJS3151P, NVJS3151P MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88 12 V, 3.3 A Features • Leading Tre...
Datasheet PDF File NTJS3151P PDF File

NTJS3151P
NTJS3151P

Overview
NTJS3151P, NVJS3151P MOSFET – Power, Single, P-Channel, Trench, ESD Protected, SC-88 12 V, 3.
3 A Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) • Gate Diodes for ESD Protection • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs V(BR)DSS −12 V D D www.
onsemi.
com RDS(on) Typ 45 mW @ −4.
5 V 67 mW @ −2.
5 V 133 mW @ −1.
8 V ID Max −3.
3 A SC−88 (SOT−363) 1 6D 2 5D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C VDSS VGS ID PD −12 ±12 −2...


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