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NTJS3157N

ON Semiconductor
Part Number NTJS3157N
Manufacturer ON Semiconductor
Description Trench Power MOSFET
Published Feb 16, 2011
Detailed Description NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features www.DataSheet4U.com http://onsemi.com V(BR)...
Datasheet PDF File NTJS3157N PDF File

NTJS3157N
NTJS3157N

Overview
NTJS3157N Trench Power MOSFET 20 V, 4.
0 A, Single N−Channel, SC−88 Features www.
DataSheet4U.
com http://onsemi.
com V(BR)DSS 20 V RDS(on) Typ 45 mW @ 4.
5 V 55 mW @ 2.
5 V 70 mW @ 1.
8 V 4.
0 A ID Max • Leading Trench Technology for Low RDS(ON) Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board • Utilization, Same as SC−70−6 Pb−Free Packages are Available Applications • DC−DC Conversion • Low Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs D SC−88 (SOT−363) 1 6 D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C tp = 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 ±8.
0 3.
2 2.
3 4.
0 1.
0 10 −55 to 150 1.
6 260 W A Unit V V A G 3 Top View 4 S D 2 5 D MARKING DIA...


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