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NID5004N

ON Semiconductor
Part Number NID5004N
Manufacturer ON Semiconductor
Description Self-Protected FET
Published Jan 17, 2007
Detailed Description NID5004N Self−Protected FET with Temperature and Current Limit 40 V, 6.5 A, Single N−Channel, DPAK Self–protected FETs ...
Datasheet PDF File NID5004N PDF File

NID5004N
NID5004N

Overview
NID5004N Self−Protected FET with Temperature and Current Limit 40 V, 6.
5 A, Single N−Channel, DPAK Self–protected FETs are a series of power MOSFETs which utilize ON Semiconductor HDPlust technology.
The self–protected MOSFET incorporates protection features such as integrated thermal and current limits.
The self−protected MOSFETs include an integrated Drain−to−Gate Clamp that provides overvoltage protection from transients and avalanche.
The device is protected from Electrostatic Discharge (ESD) by utilizing an integrated Gate−to−Source Clamp.
Features • Short Circuit Protection • In Rush Current Limit • Thermal Shutdown with Automatic Restart • Avalanche Rated • Overvoltage Protection • ESD Protection (4 kV HBM) • Controlled Slew Rate for Low Noise Switching • AEC Q101 Qualified • This is a Pb−Free Device Applications • Solenoid Driver • Relay Driver • Small Motors • Lighting • Relay Replacement • Load Switching http://onsemi.
com VDSS (Clamped) 40 V RDS(on) Typ 110 mW @ 10 V ID Typ (Limited) 6.
5 A Drain Gate Input Overvoltage Protection RG ESD Protection Temperature Current Current Limit Limit Sense DPAK CASE 369C STYLE 2 Source MARKING DIAGRAM 1 YYW 2 D5 3 004NG D5004N = Device Code Y = Year WW = Work Week G = Pb−Free Device 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device Package Shipping† NID5004NT4G DPAK 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev.
1 Publication Order Number: NID5004N/D NID5004N MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 44 Vdc Gate−to−Source Voltage VGS "14 Vdc Drain Current Continuous ID Internally Limited Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2...


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