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BUF642

Vishay Siliconix
Part Number BUF642
Manufacturer Vishay Siliconix
Description Silicon NPN High Voltage Switching Transistor
Published Jan 25, 2007
Detailed Description www.DataSheet4U.com BUF642 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Of...
Datasheet PDF File BUF642 PDF File

BUF642
BUF642

Overview
www.
DataSheet4U.
com BUF642 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 9 6 10 3 6 70 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Junction ambient Test Conditions Symbol RthJC RthJA Value 1.
78 85 Unit K/W K/W Document Number 86511 Rev.
2, 20–Jan–99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (8) BUF642 Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Test Conditions VCES = 900 V VCES = 900 V; Tcase = 150° C VCEO = 400 V Collector-emitter IC = 500 mA; L = 125 mH; breakdown voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter IC = 1 A; IB = 0.
25 A saturation voltage IC = 3 A; IB = 1 A Base-emitter saturation voltage g IC = 1 A; IB = 0.
25 A IC = 3 A; IB = 1 A DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 3 A VCE = 2 V; IC = 6 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2.
5 A; IB1 = 0.
5 A; –IB2 = 0.
5 A; –VBE(off) = 5 V Parameter Collector cut-off current Symbol ICES ICES ICEO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW Min Typ Max 50 200 100 Unit mA mA mA V V V V V V 400 9 0.
5 1 1 1.
5 15 15 8 4 550 V ...


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