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BUF644

Vishay Siliconix
Part Number BUF644
Manufacturer Vishay Siliconix
Description Silicon NPN High Voltage Switching Transistor
Published Jan 25, 2007
Detailed Description www.DataSheet4U.com BUF644 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Of...
Datasheet PDF File BUF644 PDF File

BUF644
BUF644

Overview
www.
DataSheet4U.
com BUF644 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 8 12 4 6 70 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.
78 Unit K/W Document Number 86512 Rev.
2, 20–Jan–99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (9) BUF644 Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA Symbol ICES ICES V(BR)CEO V(BR)EBO Min Typ Max 50 0.
5 Unit mA mA V V 0.
1 0.
2 0.
9 1 18 18 0.
2 0.
4 1 1.
2 V V V V 400 9 Collector-emitter working voltage Dynamic y saturation voltage g IC = 1.
3 A; IB = 0.
3 A VCEsat IC = 4 A; IB = 1.
3 A VCEsat IC = 1.
3 A; IB = 0.
3 A VBEsat IC = 4 A; IB = 1.
3 A VBEsat VCE = 2 V; IC = 10 mA hFE VCE = 2 V; IC = 1.
3 A hFE VCE = 2 V; IC = 4 A hFE VCE = 5 V; IC = 8 A hFE VS = 50 V; L = 1 mH; IC = 8 A; VCEW IB1 = 2.
7 A; –IB2 = 0.
8 A; –VBB = 5 V IC = 4 A; IB = 0.
8 A;...


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