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SSM6N7002FU

Toshiba Semiconductor
Part Number SSM6N7002FU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jan 27, 2007
Detailed Description SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications A...
Datasheet PDF File SSM6N7002FU PDF File

SSM6N7002FU
SSM6N7002FU

Overview
SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 3.
3 Ω (max) (@VGS = 4.
5 V) : Ron = 3.
2 Ω (max) (@VGS = 5 V) : Ron = 3.
0 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
th...


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