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K4M56163PG

Part Number	K4M56163PG
Manufacturer	Samsung semiconductor
Description	4M x 16Bit x 4 Banks Mobile SDRAM
Published	Feb 3, 2007
Detailed Description	www.DataSheet4U.com K4M56163PG - R(B)E/G/C/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. ...
Datasheet	K4M56163PG PDF File

Overview

www.
DataSheet4U.
com K4M56163PG - R(B)E/G/C/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.
8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) -.
DPD (Deep Power Down) • DQM for masking.
• Auto refresh.
•...

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