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UPA2450

NEC
Part Number UPA2450
Manufacturer NEC
Description N-Channel MOSFET
Published Feb 21, 2007
Detailed Description www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCH...
Datasheet PDF File UPA2450 PDF File

UPA2450
UPA2450

Overview
www.
DataSheet4U.
com DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 6 DESCRIPTION The µ PA2450 is a switching device which can be driven directly by a 2.
5 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
0.
5±0.
1 1.
85±0.
1 0.
145±0.
05 (0.
50) 2 3 5 4 0.
1 0.
25 + −0.
05 FEATURES • 2.
5 V drive avaliable • Low on-state resistance RDS(on)1 = 17.
5 mΩ MAX.
(VGS = 4.
5 V, ID = 4.
0 A) RDS(on)2 = 18.
5 mΩ MAX.
(VGS = 4.
0 V, ID = 4.
0 A) RDS(on)3 = 22.
0 mΩ MAX.
(VGS = 3.
1 V, ID = 4.
0 A) RDS(on)4 = 27.
5 mΩ MAX.
(VGS = 2.
5 V, ID = 4.
0 A) • Built-in G-S protection diode against ESD 4.
4±0.
1 5.
0±0.
1 7 0 0.
05 + −0.
05 (0.
9) ORDERING INFORMATION (1.
45) PART NUMBER PACKAGE 6PIN HWSON (4521) (0.
15) (3.
05) µ PA2450TL ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±12 ±8.
6 ±80 2.
5 0.
7 150 –55 to +150 V V A A W W °C °C Gate1 1,2: Source 1 3: Gate 1 7: Drain 5,6: Source 2 4: Gate 2 EQUIVALENT CIRCUIT Drain1 Drain2 Total Power Dissipation (2 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Body Diode 0.
8 MAX.
Gate2 Gate Protection Diode Source2 Body Diode Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
TA = 25°C Mounted on ceramic board.
3.
TA = 25°C Mounted on FR4 board.
Remark Gate Protection Diode Source1 The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this do...


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