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BAV199DW

Part Number	BAV199DW
Manufacturer	Jiangsu Changjiang Electronics
Description	Multi-Chip DIODES
Published	Feb 22, 2007
Detailed Description	www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW FEA...
Datasheet	BAV199DW PDF File

Overview

www.
DataSheet4U.
com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW FEATURES Power dissipation PCM: 0.
2 W (Tamb=25℃) Multi-Chip DIODES SOT-363 Collector current IF : 200 mA Collector-base voltage VR : 85 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:K52 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) MIN 85 5 0.
9 1.
0 1.
1 1.
25 TYP MAX UNIT V nA Test conditions IR= 100µA VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V f=1MHz Forward voltage VF V Junction capacitance Cj 2 pF IF=IR=10mA Reveres rec...

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