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STN817

ST Microelectronics
Part Number STN817
Manufacturer ST Microelectronics
Description PNP MEDIUM POWER TRANSISTORS
Published Feb 25, 2007
Detailed Description www.DataSheet4U.com ® STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type STF817 STN817 s Marking 817 N817 s SURFACE-M...
Datasheet PDF File STN817 PDF File

STN817
STN817

Overview
www.
DataSheet4U.
com ® STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type STF817 STN817 s Marking 817 N817 s SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 APPLICATIONS s VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices.
1 SOT-223 2 3 SOT-89 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Devices Packages V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
Operating Junction Temperature Value STN817 SOT-223 -120 -80 -5 -1.
5 -2 -0.
3 -0.
6 1.
6 -65 to 150 150 1.
4 STF817 SOT-89 V V V A A A A W o C o C Unit April 2002 1/5 STF817 - STN817 THERMAL DATA SOT-223 R thj-amb • Thermal Resistance Junction-ambient 2 SOT-89 89 o Max 78 C/W • Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min.
Typ.
Max.
-500 -1 -100 Unit µA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -100 mA I C = -1 A I C = -100 mA I C = -1 A I C = -100 mA I C = -500 mA I C = -1 A I C = -0.
1 A I B = -10 mA I B = -100 mA I B = -10 mA I B = -100 mA V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V 140 80 40 50 -0.
25 -0.
5 -1 -1.
1 V V V V fT Transition Frequency MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.
5 % ...


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