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MRF5S19130R3

Motorola
Part Number MRF5S19130R3
Manufacturer Motorola
Description N-Channel Enhancement-Mode Lateral MOSFETs
Published Feb 26, 2007
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S...
Datasheet PDF File MRF5S19130R3 PDF File

MRF5S19130R3
MRF5S19130R3

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.
9 to 2.
0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.
75 MHz, f2 = 1961.
25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.
2288 MHz Channel Bandwidth Carrier.
Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz.
Distortion Products Measured over 1.
2288 MHz Bandwidth at f1 - 2.
5 MHz and f2 +2.
5 MHz.
Peak/Avg.
= 9.
8 dB @ 0.
01% Probability on CCDF.
Output Power — 26 Watts Avg.
Power Gain — 13 dB Efficiency — 25% IM3 — - 37 dBc ACPR — - 51 dB • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 V Operation • Available in Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 - 0.
5, +15 324 1.
85 - 65 to +150 200 110 Unit Vdc Vdc Watts W/°C °C °C Watts MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and MRF5S19130HSR3.
“H” suffix indicates lower thermal resistance package.
1990 MHz, 26 W AVG.
, 2 x N - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION Freescale Semiconductor,...


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