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MTD5P06E

Motorola
Part Number MTD5P06E
Manufacturer Motorola
Description TMOS POWER FET
Published Mar 3, 2007
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06E/D Designer's TMOS E-FET ....
Datasheet PDF File MTD5P06E PDF File

MTD5P06E
MTD5P06E

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Replaces MTD4P05 and MTD4P06E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 5.
0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds ™ Data Sheet MTD5P06E Motorola Preferred Device TMOS POWER FET 5.
0 AMPERES 60 VOLTS RDS(on) = 0.
55 OHM ® D G S CASE 369A–13, Style 2 DPAK ...


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