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MTD5P06V

Motorola
Part Number MTD5P06V
Manufacturer Motorola
Description TMOS POWER FET
Published Mar 3, 2007
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06V/D Designer's TMOS V ™ .™...
Datasheet PDF File MTD5P06V PDF File

MTD5P06V
MTD5P06V

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5P06V/D Designer's TMOS V ™ .
™ Data Sheet MTD5P06V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.
450 OHM TM D G S CASE 369A–13, Style 2 DPAK Surface Mount Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET • Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy ...


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