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IRF7420

International Rectifier
Part Number IRF7420
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Mar 21, 2007
Detailed Description www.DataSheet4U.com PD - 94278 IRF7420 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface ...
Datasheet PDF File IRF7420 PDF File

IRF7420
IRF7420

Overview
www.
DataSheet4U.
com PD - 94278 IRF7420 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -12V RDS(on) max 14mΩ@VGS = -4.
5V 17.
5mΩ@VGS = -2.
5V 26mΩ@VGS = -1.
8V ID -11.
5A -9.
8A -8.
1A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
S 1 8 7 A D D D D S S G 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-20 -11.
5 -9.
2 -46 2.
5 1.
6 20 ±8 -55 to +150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max.
50 Units °C/W www.
irf.
com 1 07/11/01 IRF7420 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Sourc...


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