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MRF7S19080HR3

Part Number	MRF7S19080HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 23, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field...
Datasheet	MRF7S19080HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev.
0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 18 dB Drai...

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