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SST34HF3244C

SST
Part Number SST34HF3244C
Manufacturer SST
Description 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory
Published Mar 29, 2007
Detailed Description www.DataSheet4U.com 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory SST34HF3244C SST34HF32x4x32Mb CSF + 4/8/16 ...
Datasheet PDF File SST34HF3244C PDF File

SST34HF3244C
SST34HF3244C

Overview
www.
DataSheet4U.
com 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory SST34HF3244C SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM (x16) MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Top Sector Protection – 8 Mbit + 24 Mbit • SRAM Organization: – 4 Mbit: 256K x16 • Single 2.
7-3.
3V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 25 mA (typical) – Standby Current: 20 µA (typical) • Hardware Sector Protection (WP#) – Protects 8 KWord in the smaller bank by holding WP# low and unprotects by holding WP# high • Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array • Byte Selection for Flash (CIOF pin) – Selects 8-bit or 16-bit mode • Sector-Erase Capability – Uniform 2 KWord sectors • Flash Chip-Erase Capability • Block-Erase Capability – Uniform 32 KWord blocks • Erase-Suspend / Erase-Resume Capabilities • Read Access Time – Flash: 70 ns – SRAM: 70 ns • Security ID Feature – SST: 128 bits – User: 256 Bytes • Latched Address and Data • Fast Erase and Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling – Ready/Busy# pin • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 56-ball LFBGA (8mm x 10mm) – 62-ball LFBGA (8mm x 10mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST34HF3244C ComboMemory device integrates either a 2M x16 or 4M x8 CMOS flash memory bank with a 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP).
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to at...


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