DatasheetsPDF.com

SST34HF324G

Part Number	SST34HF324G
Manufacturer	Silicon Storage Technology
Description	32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory
Published	Apr 28, 2010
Detailed Description	32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory www.DataSheet4U.com SST34HF324G SST34HF324G32Mb Dual-Bank Flash + 4 Mb...
Datasheet	SST34HF324G PDF File

Overview

32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory www.
DataSheet4U.
com SST34HF324G SST34HF324G32Mb Dual-Bank Flash + 4 Mb SRAM MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 – 32 Mbit: 24Mbit + 8Mbit • Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash • SRAM Organization: – 4 Mbit: 256K x16 • Single 2.
7-3.
3V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: (typical values @ 5 MHz) – Active Current: Flash 10 mA (typical) SRAM 6 mA (typical) – Standby Current: 10 µA (typical) • Hardware Sector Protection (WP#) – Protects 4 outer most sectors (8 KWord) in the smaller bank by holding WP# low and unprotects by holding WP# high • Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time – Flash: 70 ns – SRAM: 70 ns • Erase-Suspend / Erase-Resume Capabilities • Latched Address and Data • Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 48-ball LFBGA (6mm x 8mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST34HF324G ComboMemory devices integrate a 2M x16 CMOS flash memory bank with 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP).
These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches.
The SST34HF324G devices are ideal for applications such as cellular phones, GPS devices...

Similar Datasheet

SST34HF3223B (SST34HF3223B / SST34HF3243B) 32M-bit Concurrent SuperFlash + SRAM Combo Memory - Silicon Storage Technology
SST34HF3242C 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemory - Silicon Storage Technology
SST34HF3243B (SST34HF3223B / SST34HF3243B) 32M-bit Concurrent SuperFlash + SRAM Combo Memory - Silicon Storage Technology
SST34HF3244 (SST34HF3244 - SST34HF3284) 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory - SST
SST34HF3244C 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory - SST
SST34HF3244C 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemory - Silicon Storage Technology
SST34HF324G 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory - Silicon Storage Technology
SST34HF3282 (SST34HF3282x / SST34HF3284x) 32M-bit Concurrent SuperFlash + SRAM Combo Memory - Silicon Storage Technology
SST34HF3282 (SST34HF3244 - SST34HF3284) 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory - SST
SST34HF3282 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemory - Silicon Storage Technology

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)