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BCP52-16

ST Microelectronics
Part Number BCP52-16
Manufacturer ST Microelectronics
Description LOW POWER PNP TRANSISTOR
Published Mar 31, 2007
Detailed Description www.DataSheet4U.com ® BCP52-16 LOW POWER PNP TRANSISTOR Ordering Code BCP52-16 s Marking BCP5216 s s s SILICON EP...
Datasheet PDF File BCP52-16 PDF File

BCP52-16
BCP52-16

Overview
www.
DataSheet4U.
com ® BCP52-16 LOW POWER PNP TRANSISTOR Ordering Code BCP52-16 s Marking BCP5216 s s s SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCP55-16 2 1 SOT-223 2 3 APPLICATIONS MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS s OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS s AUTOMOTIVE POST-VOLTAGE REGULATION s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max.
Operating Junction Temperature Value -60 -60 -60 -5 -1 -1.
5 -0.
1 -0.
2 1.
4 -65 to 150 150 Unit V V V V A A A A W o o C C September 2003 1/4 BCP52-16 THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient 2 Max 89.
3 o C/W • Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 µ A T j = 125 o C -60 Min.
Typ.
Max.
-100 -10 Unit nA µA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER Collector-Emitter Breakdown Voltage (R BE = 1 K Ω ) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain I C = -20 mA -60 V I C = -100 µ A -60 V V (BR)EBO I E = -10 µ A -5 V V CE(sat) ∗ V BE(on) ∗ h FE ∗ I C = -500 mA I C = -500 mA I C = -5 mA I C = -150 mA I C = -500 mA I B = -50 mA V CE = -2 V V CE = -2 V V CE = -2 V V CE = -2 V f = 20 MHz 40 100 25 50 -0.
5 -1 V V 250 MHz fT Transition Frequency I C = -10 mA V...


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