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BUL118D

ST Microelectronics
Part Number BUL118D
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 2, 2007
Detailed Description www.DataSheet4U.com ® BUL118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAG...
Datasheet PDF File BUL118D PDF File

BUL118D
BUL118D

Overview
www.
DataSheet4U.
com ® BUL118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max.
Operating Junction Temperature Value 700 400 9 3 6 1.
5 3 60 -65 to 150 150 Unit V V V A A A A W o o C C December 2002 1/7 BUL118D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.
08 62.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO V EBO VCEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter-Base Voltage (I C = 0) Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 700 V V CE = 700 V V CE = 400 V I E = 10 mA I C = 100 mA 9 400 T C = 125 o C Min.
Typ.
Max.
100 500 250 Unit µA µA µA V V V CE(sat) ∗ I C = 0.
5 A IC = 1 A IC = 2 A I C = 0.
5 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.
5 A IC = 2 A V CC = 125 V I B1 = 0.
2 A t p = 20 µ s IC = 1 A V BE(of...


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