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BUL118

STMicroelectronics
Part Number BUL118
Manufacturer STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description ® BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREA...
Datasheet PDF File BUL118 PDF File

BUL118
BUL118


Overview
® BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage o (I C = 0, I B <1.
5A, tp <10 µ s, Tj < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature o Value 700 400 BV EBO 3 6 1.
5 3 60 -65 to 150 Uni t V V V A A A A W o C May 1999 1/7 BUL118 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.
08 62.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES BV EBO Parameter Collector Cut-off Current (V BE = -1.
5 V) Emitter-Base Breakdown Voltage (I C =0) Collector-Emitter Sustaining Voltage Collector Cut-Off Current (I B = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 700 V V CE = 700 V I E = 10 mA Tj = 125 oC 9 Min.
Typ .
Max.
100 500 18 Un it µA µA V V CEO(sus) I CEO V CE(sat )∗ I C = 100 mA V CE = 400 V I C = 0.
5 A IC = 1 A IC = 2 A I C = 0.
5 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.
5 A Group A Group B IC = 2 A V CC = 125 V I B1 = 0.
2 A T p = 30 µ s IC = 1 A V BEoff = -5 V V c l...


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