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MBD701

ON Semiconductor
Part Number MBD701
Manufacturer ON Semiconductor
Description Silicon Hot-Carrier Diodes Schottky Barrier Diodes
Published Apr 8, 2007
Detailed Description www.DataSheet4U.com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devic...
Datasheet PDF File MBD701 PDF File

MBD701
MBD701

Overview
www.
DataSheet4U.
com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications.
They are readily adaptable to many other fast switching RF and digital applications.
They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements.
They are also available in a Surface Mount package.
Features http://onsemi.
com MARKING DIAGRAMS TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE • • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.
0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available MBD 701 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT Derate above 25°C MBD701 MMBD701LT TJ Tstg Symbol VR PF 280 200 2.
8 2.
0 −55 to +125 −55 to +150 mW mW/°C °C °C Value 70 Unit V 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 ANODE 5H M G G 1 3 CATHODE Operating Junction Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Total Capacitance (VR = 20 V, f = 1.
0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.
0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 70 − − − − Typ − 0...


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