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MMBT3906

UTC
Part Number MMBT3906
Manufacturer UTC
Description PNP SILICON TRANSISTOR
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emi...
Datasheet PDF File MMBT3906 PDF File

MMBT3906
MMBT3906

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT3906L-AE3-R MMBT3906G-AE3-R SOT-23 MMBT3906L-AL3-R MMBT3906G-AL3-R SOT-323 MMBT3906L-AN3-R MMBT3906G-AN3-R SOT-523 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 1 2 3 B E C B E C B E C Packing Tape Reel Tape Reel Tape Reel  MARKING 2A.
L: Lead Free G: Halogen Free www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R206-013.
H MMBT3906 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage VCBO -40 V Collector Emitter Voltage Emitter Base Voltage VCEO -40 V VEBO -5 V Collector Current Base Current IC -200 mA IB -50 mA SOT-23 0.
35 W Collector Dissipation SOT-323 PC 0.
3 W SOT-523 0.
27 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS SOT-23 360 Junction to Ambient SOT-323 θJA 420 SOT-523 450 Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
 ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) UNIT °С/W °С/W °С/W PARAMETER SYMBOL TEST CONDITIONS MIN Collector Cut-off Current ICEX VCE=-30V, VEB=-3V Base Cut-off Current IBL VCE=-30V, VEB=-3V Collector-Base Breakdown Voltage VCBO IC=-10A,IE=0 -40 Collector-Emitter Breakdown Voltage (Note) VCEO IC=-1mA, IB=0 -40 Emitter-Base Breakdown Voltage VEBO IE=-10A, IC=0 -5 hFE1 VCE=-1V, IC=-0.
1mA 60 DC Current Gain (Note) hFE...


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