DatasheetsPDF.com

PZTA92T1

Motorola
Part Number PZTA92T1
Manufacturer Motorola
Description PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
Published Apr 15, 2007
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR...
Datasheet PDF File PZTA92T1 PDF File

PZTA92T1
PZTA92T1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.
0 – 500 1.
5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.
3 www.
DataSheet4U.
com Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.
0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter–Base Cutoff Current (VBE = – 3.
0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.
0 — — — — — – 0.
25 – 0.
1 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 1.
0 mAdc, VCE = – 10 Vdc) (IC = –10 mAdc, VCE = – 10 Vdc) (IC = – 30 mAdc, VCE = – 10 Vdc) Saturation Voltages (IC = –20 mAdc, IB = –2.
0 mAdc) (IC = –20 mAdc, IB = –2.
0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) — — — — — Vdc – 0.
5 – 0.
9 — DYNAMIC CHARACTERISTICS Collector–Base Capacitance @ f = 1.
0 MHz (VCB = –20 Vdc, IE = 0) Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz) Ccb fT — 50 6.
0 — pF MHz 1.
Device mounted on a glass epoxy printed circuit board 1.
575 in.
x 1.
575 in.
x 0.
059 in.
; mounting pad for the collector lead min.
0.
93 in2.
2.
Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.
0%.
Thermal Clad is a trademark of the Bergquist Company ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)