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FQP10N60CF

Fairchild Semiconductor
Part Number FQP10N60CF
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Feat...
Datasheet PDF File FQP10N60CF PDF File

FQP10N60CF
FQP10N60CF

Overview
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features • 9A, 600V, RDS(on) = 0.
8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D G G DS TO-220 FQP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) www.
DataSheet4U.
com Parameter FQP10N60CF FQPF10N60CF 600 9.
0 5.
7 (Note 1) Units V A A A V mJ A mJ V/ns 9.
0 * 5.
7 * 36 * ± 30 - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) 36 583 9.
0 16.
9 4.
5 169 1.
35 -55 to +150 300 50 0.
4 W W/°C °C °C * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQP10N60CF FQPF10N60CF 0.
74 62.
5 2.
5 62.
5 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com FQP10N60CF / FQPF10N60CF Rev.
A FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Packa...


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