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CEM3082

CET
Part Number CEM3082
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS...
Datasheet PDF File CEM3082 PDF File

CEM3082
CEM3082

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.
5mΩ @VGS = 10V.
RDS(ON) = 15.
0mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D 8 CEM3082 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 12 50 2.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistanc...


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