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CEM3032

Chino-Excel Technology
Part Number CEM3032
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V....
Datasheet PDF File CEM3032 PDF File

CEM3032
CEM3032

Overview
CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.
8mΩ @VGS = 10V.
RDS(ON) = 6.
8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 18 IDM 72 Maximum Power Dissipation PD 2.
5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 2.
2010.
Sep http://www.
cet-mos.
com Electrical Characteristics Tc = 25 C unless otherwise noted Paramete...


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