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CEP1165

CET
Part Number CEP1165
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9...
Datasheet PDF File CEP1165 PDF File

CEP1165
CEP1165


Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.
9Ω 0.
9Ω 0.
9Ω ID 10A 10A 10A e @VGS 10V 10V 10V CEP1165/CEB1165 CEF1165 Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D D G S CEB SERIES TO-263(DD-PAK) G G D S G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg f TO-220F Units V V 600 ±30 10 40 167 1.
33 -55 to 150 10 40 50 0.
4 e e A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.
75 62.
5 Limit 2.
5 65 Units C/W C/W Details are subject to change without notice .
1 Rev 1.
2006.
Nov http://www.
cetsemi.
com CEP1165/CEB1165 CEF1165 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 10A g VDS = 480V, ID = 10A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = ...


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