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CEB13N07

CET
Part Number CEB13N07
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(...
Datasheet PDF File CEB13N07 PDF File

CEB13N07
CEB13N07

Overview
CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V.
RDS(ON) = 150mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 70 Units V V A A W W/ C mJ A C ±20 13 52 45 0.
3 85 11 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
35 62.
5 Units C/W C/W 2004.
November 4 - 54 http://www.
cetsemi.
com CEP13N07/CEB13N07 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 11A VDS = 48V, ID = 13.
6A, VGS = 5V VDD = 30V, ID = 6.
8A, VGS = 5V, RGEN = 25Ω 14 10 28 9 5.
5 2.
1 2.
3 11 1.
5 30 25 55 20 6.
4 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V V...


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