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CEB13N5A

CET
Part Number CEB13N5A
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A...
Datasheet PDF File CEB13N5A PDF File

CEB13N5A
CEB13N5A

Overview
CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.
48Ω 0.
48Ω 0.
48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 500 VGS ±30 ID 13 13 d 8 8d IDM e 52 52d 208 52 PD 1.
7 0.
4 EAS 542 IAS 8.
5 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Therm...


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