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CEP21A2

CET
Part Number CEP21A2
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON)...
Datasheet PDF File CEP21A2 PDF File

CEP21A2
CEP21A2

Overview
CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.
5V.
RDS(ON) = 70mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 25 75 43 0.
29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
5 62.
5 Units C/W C/W 2003.
July 4 - 66 http://www.
cetsemi.
com CEP21A2/CEB21A2 Electrical Characteristics Parameter Off Characteristics Drain-Source ...


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