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CEB35P03

CET
Part Number CEB35P03
Manufacturer CET
Description P-Channel MOSFET
Published May 7, 2007
Detailed Description CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS...
Datasheet PDF File CEB35P03 PDF File

CEB35P03
CEB35P03

Overview
CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V.
RDS(ON) =57mΩ @VGS = -5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -35 -140 71 0.
48 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store...


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