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CEB35P10

CET
Part Number CEB35P10
Manufacturer CET
Description P-Channel MOSFET
Published Oct 2, 2015
Detailed Description CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS...
Datasheet PDF File CEB35P10 PDF File

CEB35P10
CEB35P10

Overview
CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS = -10V.
RDS(ON) =92mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -100 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -32 IDM -128 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 125 0.
83 Single Pulsed Avalanche Energy e EAS 450 Single Pulsed Avalanche Current e IAS 30 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
2 62.
5 Units V V A A W W/ C mJ A C Units C/W C/W Specification and data are subject to change without notice .
1 Rev 1.
2009.
July http://www.
cetsemi.
com CEP35P10/CEB35P10 CEF35P10 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -16A VGS = -4.
5V, ID = -8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = -25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = -50V, ID = -18A, VGS = -10V, RGEN= 3.
3Ω Turn-Off Fall Time tf Total Gate Charge...


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