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CEP655N

CET
Part Number CEP655N
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP655N CEB655N CEI655N...
Datasheet PDF File CEP655N PDF File

CEP655N
CEP655N

Overview
CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 150V RDS(ON) 0.
153Ω 0.
153Ω 0.
153Ω 0.
153Ω ID 15A 15A 15A 15A d PRELIMINARY @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 150 ±25 15 60 83 0.
56 -55 to 175 15 60 39 0.
26 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Pa...


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