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CEP658N

CET
Part Number CEP658N
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP658N/CEB658N CEF658N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP658N CEB658N CEF685N VDSS 18...
Datasheet PDF File CEP658N PDF File

CEP658N
CEP658N

Overview
CEP658N/CEB658N CEF658N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.
22Ω 0.
22Ω 0.
22Ω ID 16A 16A 16A d PRELIMINARY @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 180 ±20 16 64 125 1.
0 -55 to 150 16 64 40 0.
32 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.
0 62.
5 Limit 3.
1 65 Units C/W C/W This i...


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